Bombardier Learjet - Transistor - 2N6274
Description: Transistor
Part Number: 2N6274
Item Description
An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.
Features and Characteristics
Inclosure Material
|
Metal
|
Overall Length
|
0.375 inches
|
Overall Diameter
|
0.875 inches
|
Mounting Facility Quantity
|
2
|
Internal Configuration
|
Junction contact
|
Electrode Internally-electrically Connected To Case
|
Collector
|
|
Internal Junction Configuration
|
Npn
|
|
Mounting Method
|
Unthreaded hole
|
|
Features Provided
|
Hermetically sealed case
|
|
Semiconductor Material
|
Silicon
|
|
Voltage Rating In Volts Per Characteristic
|
120.0 breakdown voltage, collector-to-base, emitter open and 100.0 breakdown voltage, collector-to-emitter, base open and 6.0 breakdown voltage, emitter-to-base, collector open
|
|
Current Rating Per Characteristic
|
Current Rating Per Characteristic
|
|
Power Rating Per Characteristic
|
250.0 milliwatts small-signal input power, common-collector
|
|
Maximum Operating Tempurature Per Measurement Point
|
200.0 degrees celsius junction
|
|
Terminal Type And Quantity
|
2 uninsulated wire lead and 1 case
|
|
Specification Data
|
80131-release6361 professional/industrial association specification
|
|
FSC
|
5961 Semiconductor Devices And Associated Hardware
|
|
NIIN
|
010403682
|
|
NSN
|
5961010403682
|
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